View source for Pro Electron

'''Pro Electron''' or '''EECA''' is the European type designation and registration system for [[active component]]s (such as [[semiconductor]]s, [[liquid crystal display]]s, [[sensor|sensor device]]s, [[vacuum tube|electronic tube]]s and [[cathode ray tube]]s).

Pro Electron was set up in 1966 in [[Brussels]], [[Belgium]]. In 1983 it was merged with the '''European Electronic Component Manufacturers Association''' (EECA) and since then operates as an agency of the EECA.

The goal of Pro Electron is to allow unambiguous identification of electronic parts, even when made by several different manufacturers. To this end, manufacturers register new devices with the agency and receive new type designators for them.

== Designation system ==
Examples of Pro Electron type designators are:
* AD162        – Germanium power [[transistor]] for audio frequency use
* BY133        – [[Silicon rectifier]]
* BZY88C5V1    – Silicon 5.1 volt [[Zener diode]]
* CQY97        – [[light emitting diode]]
* ECC83        – 6.3 volt heater noval dual triode
* A63EAA00XX01 – Color TV picture tube
* SAA1300      – Digital integrated circuit

Pro Electron took the popular European coding system in use from around 1934 for valves ([[Vacuum tube|tubes]]), i.e. the [[Mullard–Philips tube designation]], and essentially re-allocated several of the rarely used heater designations (first letter of the part number) for semiconductors. The second letter was used in a similar way to the valves naming convention: "A" for signal diode, "C" for low-power bipolar transistor or triode, "D" for high-power transistor (or triode), and "Y" for rectifier, but other letter designations did not follow the vacuum tube mode so closely.

The three digits (or letter followed by two digits) after the first two letters were essentially a sequence number, with (at first) a vestige of the valve-era convention that the first one or two digits would indicate the base (package) type in examples such as in this family of general-purpose transistors:
{| class="wikitable"
|-
! Package !! NPN !! PNP
|-
| [[TO-18]]  || BC10x || BC17x
|-
| [[Lockfit]] || BC14x || BC15x
|-
| [[TO-92]] || [[BC548|BC54x]] || BC55x
|}
... where x may be:
* 7 for high voltage
* 8 for general purpose
* 9 for low noise/high gain

Pro Electron naming for transistors and Zener diodes has been widely taken up by semiconductor manufactures around the world. Pro Electron naming of [[integrated circuits]], other than some special (e.g. television signal-processing) chips, did not greatly take hold (even in Europe). Other popular designation systems were used for many integrated circuits.

===Differences between Pro Electron and earlier valve-naming conventions ===

* Unlike the tube naming convention, if there are two transistors in a single envelope, the type letter was never repeated - so a dual NPN RF transistor might get a type "BFM505" rather than something like "BFF505" for instance. 
* Although some of the most popular devices conform to a pattern of serial numbers that identified package type and polarity, many do not.
* The letters assigned for the second character of transistor and diode type numbers differ in several ways, e.g.
** "B" tends to be used for dual ''varicap'' diodes
** "L" in the context of transistors designates RF power (transmitting) transistors; for valves it meant a high-power pentode tube (the usual choice for power RF)
** "Z" is used for semiconductor Zener diodes instead of (full-wave) rectifier valves ([[Vacuum tube|tubes]]).

=== Frequently used first letters in European active devices ===

**'''A''' [[Germanium]] (or any semiconductor with junctions in a material with a band gap of 0.6 to 1.0eV)
**'''B''' [[Silicon]] (or band gap of 1.0 to 1.3eV)
**'''C''' [[Boron group|III]]-[[Nitrogen group|V]] semiconductors with a band gap of 1.3eV or more, like [[gallium arsenide]] in [[Light-emitting diode|LED]]s
**'''D''' may be...
***Semiconductors with a [[band gap]] less than 0.6eV, such as [[indium antimonide]] in [[infrared detector]]s (rarely used), '''or'''
***(Mullard–Philips) 1.4V (or less) filament tubes
**'''E''' (Mullard–Philips) tubes with a 6.3V heater
**'''F''' Digital integrated circuits
**'''P''' (Mullard–Philips) tubes for a 300mA series heater supply
**'''R''' Devices without junctions, e.g. [[cadmium sulfide]] in a [[photoresistor]]
**'''S''' Solitary digital integrated circuits
**'''T''' Linear integrated circuits
**'''U''' may be...
*** (Mullard–Philips) tubes for a 100mA series heater supply, '''or'''
*** Mixed digital/analogue integrated circuits

==Electron tubes ==

* See [[Mullard–Philips tube designation]] for details. A brief summary of ''just the more common'' letters is:
     [[ECC81]]
    /  \ \\__ last digit(s)=serial number
   /    \ \__ first digit(s)=base (3=8pin 8,18,80=[[Tube bases#Noval|Noval (B9A)]], 9=[[Tube bases#Miniature 7-pin base|Mini 7-pin (B7G)]]
  /      \___ one letter per valve unit in the tube:
 D=1.4v or less      A=single-diode (low power)
 E=6.3v*             B=double-diode (''usually'' shared cathode, ''but not always'')
 P=300mA             C=triode
 U=100mA             F=pentode (low power)
                     L=pentode (high power)
                     Y=Single-phase rectifier
                     Z=Full-wave rectifier
 * Note: some 6.3 volt heater types have a split heater allowing series (12.6 volt; the
   default for [[B9A|Noval]] pins 4 to 5) or parallel (6.3 volt) operation.

==Semiconductor diodes and transistors==

===The first letter gives the semiconductor type===
(see above)

===The second letter denotes the intended use===

{|class="wikitable"
|-
! 2nd letter !! Usage  !! Example
|-
|A||Low-power/small-signal diode || AA119, BA121
|-
|B||[[Varicap|Varicap diode]] ||BB105G
|-
|C||Small signal transistor, R<sub>th</sub>G&nbsp;>&nbsp;15K/W || BC546C
|-
|D||High-power, low-frequency power transistor, R<sub>th</sub>G&nbsp;≤&nbsp;15K/W || BD139
|-
|E||[[Tunnel diode|Tunnel (Esaki-)diode]] || AE100
|-
|F||Low-power, [[Radio Frequency|RF]] (high-frequency) [[BJT|bipolar]] or [[FET]], R<sub>th</sub>G&nbsp;>&nbsp;15K/W || BF245
|-
|G||[[Hybrid integrated circuit|Hybrid device]] || BGY32, BGY585
|-
|H||[[Hall effect sensor]]/diode ||
|-
|L||High-frequency, high-power transistor (for transmitters), R<sub>th</sub>G&nbsp;≤&nbsp;15K/W || BLW34
|-
|M||[[Ring modulation|Ring modulator]]-type [[frequency mixer]] ||
|-
|N||[[Opto-isolator]] || CNY17 
|-
|P||Radiation detector ([[photodiode]], [[phototransistor]])|| BPW34
|-
|Q||Radiation generator ([[Light-emitting diode|LED]])|| CQY99 
|-
|R||Low-power control or switching device: [[thyristor]]s, [[diac]]s, [[TRIAC|triac]]s, [[Unijunction transistor|UJT]]s, programmable unijunction transistors (PUT), silicon bidirectional switch (SBS), opto-triacs etc. || BR100 
|-
|S||Low-power switching transistor, bipolar or [[MOSFET]], R<sub>th</sub>G&nbsp;>&nbsp;15K/W || BS170
|-
|T||High-power control or switching device: [[thyristor]]s, [[TRIAC]]s, silicon bidirectional switch (SBS), etc. || BT138 
|-
|U||High-power switching transistors, bipolar or [[MOSFET]], R<sub>th</sub>G&nbsp;≤&nbsp;15K/W || BU508, BUZ11
|-
|V||[[Antenna (radio)|Antenna]] ||
|-
|W||[[Surface acoustic wave#Application in electronic components|Surface-acoustic-wave device]] ||
|-
|X||[[Frequency multiplier]]: [[varactor]], [[step recovery diode]] ||
|-
|Y||High-power rectifying diode || BY228 
|-
|Z||[[Avalanche diode|Avalanche]], [[Transient voltage suppressor|TVS]], [[Zener diode|Zener]] diode || BZY91 
|}

===The serial number===
Following these two letters is a 3- or 4-digit serial number (or another letter then digits), assigned by Pro Electron. It is not always merely a sequence number; there is sometimes information conveyed in the number:
* In early devices only, the serial number often indicated the case/package type (e.g. AF114-7 for TO-5 case, while AF124-7 were TO-72 versions of the same transistors); modern surface-mount devices often begin with "8",
* early silicon transistors followed the convention of using a middle digit of 0-5 for NPN and 6-9 for PNP. 
* the last digit often indicated a particular specification or application grouping, e.g. the AF117 and AF127 were similar IF amplifier devices in different cases; the BC109, BC149, BC169 and BC549 are similar low-noise transistors).
* some modern devices use letters, such as "B" to indicate HBT bipolar transistors.<ref name="D15/2010-07">{{cite web |url=https://www.eusemiconductors.eu/images/downloads/PRO%20ELECTRON_D15%20final%20version%202007_12%20ESIA%20updated%2016%2007%2010.pdf |title=European Type Designation Code System for Electronic Components |edition=16 |publisher=Pro Electron |place=Brussels, Belgium |date=July 2010 |access-date=2022-05-04 |archive-url=https://web.archive.org/web/20170714160626/http://www.eusemiconductors.eu/images/downloads/PRO%20ELECTRON_D15%20final%20version%202007_12%20ESIA%20updated%2016%2007%2010.pdf |archive-date=2017-07-14}}</ref>

===Suffixes and version specifiers===
Suffixes may be used, letters or perhaps blocks of digits delimited by "/" or "-" from the serial number, often without fixed meanings but some of the more common conventions are:
* for small-signal transistors "A" to "C" often means low to high h<sub>FE</sub>, such as in: BC549C<ref>[http://www.fairchildsemi.com/ds/BC/BC549.pdf Datasheet for BC549, with A,B and C gain groupings]</ref>),
* numeric suffixes may be used as an alternative way to show h<sub>FE</sub> (e.g. BC327-25), or voltage rating (e.g. BUK854-800A<ref>[http://www.datasheetcatalog.org/datasheet/philips/BUK854-800A.pdf datasheet for BUK854-800A (800 volt IGBT)]</ref>).
* for voltage reference diodes letters show the tolerance ("A","B","C","D","E" indicate 1%/2%/5%/10*/20%) and may be followed by the V<sub>z</sub> value, e.g. 6V8 for 6.8 Volts or 18V for 18 volts.
* "R" can mean "reverse polarity".

Examples of suffixes and manufacturers' extensions to the basic sequence number include:

{|class="wikitable"
|-
! Prefix class !! Usage  !! Example || Notes
|-
|AC||[[Germanium]] small signal transistor || AC127/01 || an AC127 (TO-1 case) with built-on heat-conducting block
|-
|AF||[[Germanium]] [[Radio Frequency|RF]] transistor || AFY40R || the "Y40" sequence number implies industrial uses, <br />the "R" indicates reduced specifications
|-
|BC||Silicon, small-signal transistor ("allround" or "G.P.") || BC183LB || the "L" indicates Base-Collector-Emitter pinout while <br />the "B" suffix indicates medium gain (240-500 h<sub>FE</sub>) selection
|-
|BC||Silicon, small-signal transistor || BC337-25 || -25 indicates an h<sub>FE</sub> of around 250 (140-400 range)
|-
|BD||Silicon Darlington-pair power transistor || BDT60B || the "B" suffix here indicates medium voltage (-100V<sub>CBO</sub>)
|-
|BF||Silicon [[Radio Frequency|RF]] (high-frequency) [[BJT]] or [[FET]] || BF493S || a BF493 with a -350V<sub>CEO</sub> rating
|-
|BL||Silicon high-frequency, high-power (for transmitters) || BLY49A || BLY49 in a TO-66 case
|-
|BS||Silicon switching transistor, bipolar or [[MOSFET]] || BSV52LT1 || SOT-23 (surface-mount) package
|-
|BT||Silicon Thyristor or TRIAC || BT138/800 || 800V-rated TRIAC
|-
|BU||Silicon high-voltage (for [[Cathode ray tube|CRT]] horizontal deflection circuits) || BU508D || a BU508 with integral damper diode
|-
|BZ||Silicon regulator ("Zener") diode || BZY88-C5V6 || "C" indicates 5% tolerance, "5V6" indicates 5.6V<sub>z</sub>
|}

Note: A BC546 might only be marked "C546" by some manufacturers, thus possibly creating confusion with JIS abbreviated markings, because a transistor marked "C546" might also be a 2SC546.

Short summary of the most common semiconductor diode and transistor designations:
       BC549C
      / |--- \___ variant (A,B,C for transistors implies low, medium or high gain)
     /  |   \____ serial number (at least 3 digits or letter and 2 digits)
    /  device type:
 A=Ge     A=Signal diode
 B=Si     C=LF low-power transistor
          D=LF Power transistor
          F=RF transistor (or FET) 
          P=Photosensitive transistor etc.
          T=Triac or thyristor
          Y=Rectifier diode
          Z=Zener diode

===Usage in the Eastern Bloc===
Poland, Hungary, [[Electronics industry in the Socialist Republic of Romania|Romania]], and Cuba mostly used Pro Electron designations for discrete semiconductors just like Western Europe. Starting in 1971, in Poland the letter "P" was inserted, e.g. BUY54 became BUY'''P'''54.<ref>{{cite journal |author=Matuschek |title=Typenbezeichnungssystem für polnische Halbleiterbauelemente |trans-title=System of type designations for Polish semiconductor devices |language=de |pages=340 |journal=Radio Fernsehen Elektronik |publisher=VEB Verlag Technik |place=Berlin |issue=10 |year=1973 |volume=22 |issn=0033-7900}}</ref> [[Kombinat Mikroelektronik Erfurt]] (KME) in [[East Germany]] and [[Tesla (Czechoslovak company)]] used designations derived from the Pro Electron scheme. In particular, the first letter specifying the material differed while the second letter followed the table above (with the few exceptions for KME noted below).<ref name=tgl38015>{{cite book
|title=TGL 38015: Halbleiterbauelemente; Diskrete Halbleiterbauelemente und integrierte Halbleiterschaltkreise; Bildung der Typbezeichnung und Gestaltung der Typkennzeichnung
|trans-title=TGL 38015: Semiconductor Devices; Discrete Semiconductor Devices and Integrated Semiconductor Circuits; Formation of Type Designation and Marking
|publisher=Verlag für Standardisierung
|place=Leipzig
|language=de
|date=May 1986
|url=https://www.bbr-server.de/bauarchivddr/archiv/tglarchiv/tgl30001bis40000/tgl38001bis38500/tgl-38015-mai-1986.pdf
|access-date=2017-12-02
}}</ref>
{|class="wikitable"
|-
!Material
!1st letter Pro Electron
!1st letter KME East Germany
!1st letter Tesla
|-
|Germanium
|A
|G
|G
|-
|Silicon
|B
|S
|K
|-
|Compound materials (GaAs etc.)
|C
|V
|L
|-
|Multiple materials (e.g. Si + GaAs)
|C
|M
| —
|}

{|class="wikitable"
|-
!2nd letter
!KME East Germany usage
|-
|B
|Optoisolator (varicaps were included with other diodes under letter A)
|-
|M
|MOSFET (Pro Electron includes MOSFETs in letters C, D, F, L, S, U)
|-
|W
|Sensors other than radiation detectors
|}

Examples: [[Commons:File:GD241 Transistor.jpg|GD241C]] - Germanium power transistor from KME; [[Commons:File:Opto-isolator (aka).jpg|MB111]] - optoisolator from KME; [[KD503]] - Silicon power transistor from Tesla; [[Commons:File:Tesla LQ100.jpg|LQ100]] - LED from Tesla.

==Integrated circuits==
The integrated circuit designation consists of three letters, followed by a serial number of three to five digits.<ref name="D15/2010-07"/> Initially, only three-digit serial numbers were allowed. For designations with a three-digit serial number the third initial letter had a defined meaning for digital integrated circuits (see below) and the operating temperature range was encoded in the last digit of the serial number.<ref name=siemens/> The specification was changed in 1973<ref name=siemens/> to allow longer serial numbers. For designations with a serial number of more than three digits the third initial letter encodes the temperature range.<ref name="D15/2010-07"/><ref name=siemens/> Optionally, a version letter (A, B, ...) and / or a package designation can follow after the serial number.<ref name="D15/2010-07"/>

{|class="wikitable"
|-
!1st letter
!Usage
!Example
|-
|F, G, H, I
|Digital integrated circuit that is part of a family
|[[:Commons:File:FLH101.jpg|'''F'''LH101]]
|-
|M
|[[Microprocessor]]
|[[Signetics 2650#Second sources|'''M'''AB2650A]]
|-
|N
|[[Charge-transfer device]]s and [[switched capacitor]]s
|-
|P
|Digital integrated circuit that is part of a family
|[[:Commons:File:AEG Mobile Communication E-Plus PT-10 - subboard - Siemens PMB2205-0380.jpg|'''P'''MB2205]]
|-
|S
|Digital integrated circuit that is not part of a family ("solitary")
|[[Philips SAA1099|'''S'''AA1099]]
|-
|T
|Analogue integrated circuit
|[[TEA1002|'''T'''EA1002]]
|-
|U
|[[Mixed-signal integrated circuit]] (analogue and digital)
|'''U'''AA180
|}

{| class="wikitable"
|+Operating temperature ranges<ref name="D15/2010-07"/>
|-
!rowspan=2|Range
!colspan=2|3-digit serial number)
!colspan=2|serial number with more than 3 digits
|-
!3rd digit
!Example
!3rd letter
!Example
|-
|No temperature range specified
|0
|[[:Commons:File:Philips N4422 - board 1 - Philips TCA220-3076.jpg|TCA22'''0''']]
|A
|[[:Commons:File:Profitronic VCR7501VPS - controller board - Philips TDA5140A-93709.jpg|TD'''A'''5140A]]
|-
| {{0|0−}}0&nbsp;°C to +70&nbsp;°C
|1
|[[:Commons:File:FLH241 01.jpg|FLH24'''1''']]
|B
|[[:Commons:File:1&1 NetXXL powered by FRITZ! - Infineon PSB 2115 F on mainboard-1828.jpg|PS'''B'''2115F]]
|-
| −55&nbsp;°C to +125&nbsp;°C
|2
|TAA76'''2'''<ref name=siemens/>
|C
|HC'''C'''4012B<ref name=sgs4011/>
|-
| −10&nbsp;°C to +85&nbsp;°C
|3
|
|—
|—
|-
| +15&nbsp;°C to +55&nbsp;°C
|4
|
|—
|—
|-
| −25&nbsp;°C to +70&nbsp;°C
|5
|[[:Commons:File:FLH185.jpg|FLH18'''5''']]
|D
|[[:Commons:File:Profitronic VCR7501VPS - controller board - Philips SAD1009P-93703.jpg|SA'''D'''1009P]]
|-
| −25&nbsp;°C to +85&nbsp;°C
|—
|—
|E
|TB'''E'''2335<ref name=siemens/>
|-
| −40&nbsp;°C to +85&nbsp;°C
|6
|FJH10'''6'''<ref name=mullard/>
|F
|[[:Commons:File:DOV-1X - Philips HEF4011BP on printed circuit board-9798.jpg|HE'''F'''4011BP]]
|}

{| class="wikitable"
|+Common package designations<ref name="D15/2010-07"/>
|-
!Package
!Description
!Example
|-
|E
|[[Ball grid array]] (BGA)
|[[:Commons:File:Siemens C25 - board - Infineon PMB2800E-2562.jpg|PMB2800'''E''']]
|-
|H
|[[Quad Flat Package]] (QFP)
|[[:Commons:File:Hauppauge Computer Works WinTV DVB-S - Philips SAA 7146A-9866.jpg|SAA7146A'''H''']]
|-
|N
|[[Quad Flat Package]] (QFP) non leaded
|[[:Commons:File:Hermstedt Leonardo SP-PCI - Siemens PEB 2086 N-8066.jpg|PEB2086'''N''']]
|-
|P
|Plastic [[dual in-line package]] (DIP)
|[[:Commons:File:Philips PCF8574P AZ2955.1 kn03503.jpeg|PCF8574'''P''']]
|-
|T
|[[Small Outline Integrated Circuit|Small Outline Package]] (SOP)
|[[:Commons:File:PCF8574AT.jpg|PCF8574A'''T''']]
|}

=== Digital logic families ===
The combination of first letter and second letter is assigned to a specific manufacturer.<ref name="D15/2010-07"/>

    FCH171
   //  \ \__ serial number (including temperature range)
  //    \___ H=gate ("Combinatorial circuit"), J=flip-flop, K=monostable, L=[[level shifter]], Q=[[RAM]], R=[[Read-only memory|ROM]], Y=miscellaneous etc.
 FC=[[Diode–transistor logic|DTL]] by [[Philips]]<ref name=sperimentare6905/> / [[Mullard]]<ref name=mullard/>
 FD=[[Dynamic logic (digital electronics)|dynamic]] [[PMOS logic|PMOS]] by [[Philips]]<ref name=sperimentare6905/> / [[Mullard]]<ref name=mullard/>
 FE=[[PMOS logic|PMOS]] by [[Philips]]<ref name=sperimentare6905/> / [[Mullard]]<ref name=mullard/>
 FH=[[Transistor–transistor logic|TTL]] by [[Philips]]<ref name=sperimentare6905/> ([[Transistor–transistor logic#History|SUHL II series]])
 FJ=[[Transistor–transistor logic|TTL]] by [[Philips]]<ref name=sperimentare6905/> / [[Mullard]]<ref name=mullard/> ([[7400 series]])
 FK=E<sup>2</sup>CL by [[Philips]]<ref name=sperimentare6905/>
 FL=[[Transistor–transistor logic|TTL]] by [[Siemens]] ([[7400 series]])<ref name=siemens73/>
 FN=[[Emitter-coupled logic|ECL]] by [[Telefunken]]<ref name=telefunken2/>
 FP=[[High Threshold Logic|HTL]] by [[Telefunken]]<ref name=telefunken2/><ref name=telefunken/>
 FQ=[[Diode–transistor logic|DTL]] by [[SGS-ATES]]<ref name=babani74/><ref name=sadchenkov2009/>
 FS=SECL by [[Telefunken]]<ref name=telefunken2/>
 FY=[[Emitter-coupled logic|ECL]] by [[Siemens]]<ref name=siemens73/>
 FZ=[[High Threshold Logic|HTL]] by [[Siemens]]<ref name=siemens73/>
 GD=[[PMOS logic|PMOS]] by [[Siemens]] (MEM1000 series)<ref name=sperimentare7301/>
 GH=[[Emitter-coupled logic|ECL]] by [[Philips]]<ref name=radioelettronica7303/>
 GJ=[[Transistor–transistor logic|TTL]] by [[Mullard]] ([[7400 series|74H00 series]])<ref name=mullard/>
 GR=interface devices by [[Mullard]] (7500 series)<ref name=mullard/>
 GT=[[Transistor–transistor logic|TTL]] by [[Mullard]] ([[7400 series|74S00 series]])<ref name=mullard/>

Unfortunately the serial number does not specify the same type of gate in each family, e.g. while an FJH131 is a quadruple 2-input [[NAND gate]] (like the [[7400 series|7400]]), an FCH131 is a dual 4-input NAND gate,<ref name=mullard/> and an FLH131 is an 8-input NAND gate (equivalent to 7430).<ref name=siemens73/> To lessen the confusion at least for the 7400 series, at some point manufacturers included the well-known 7400 series designation both in their literature and on the integrated circuits themselves.

==See also==

*[[JEDEC]]
*[[JIS semiconductor designation]]
*[[Mullard–Philips tube designation]]
*[[RMA tube designation]]
*[[RETMA tube designation]]
*[[Russian tube designations]]
*[[Soviet integrated circuit designation]]
*[[Kombinat Mikroelektronik Erfurt#Semiconductor designation|East German integrated circuit designation]]

{{Portal|Electronics}}

==References==

{{Reflist|refs=
<ref name=mullard>{{cite book |title=Mullard semiconductors quick reference guide 1972-73 |url=http://shop.griederbauteile.ch/info/m/MullardSemiconductors-1972.pdf |publisher=Mullard Limited |place=London |access-date=2022-05-04}}</ref>
<ref name=siemens>{{cite book |title=Analog Integrated Circuits Data Book 1976/77 |url=http://www.synfo.nl/datasheets/SIEMENS_1976-1977_%20ANALOG-INTEGRATED-CIRCUITS.pdf |publisher=Siemens AG |place=München |access-date=2022-05-04}}</ref>
<ref name=siemens73>{{cite book |title=Discrete Semiconductors - Integrated Circuits - Power Semiconductors - Delivery Program 1973/74 |url=https://archive.org/details/siemens_202011/ |publisher=Siemens AG |place=München |access-date=2022-05-05}}</ref>
<ref name=sperimentare6905>{{cite magazine |title=circuiti integrati |language=it |url=https://archive.org/details/Sperimentare_1969_05/page/n3/mode/2up |magazine=Sperimentare |date=May 1969 |access-date=2022-10-19}}</ref>
<ref name=sperimentare7301>{{cite magazine |title=equivalenze dei transistori |language=it |url=https://archive.org/details/Sperimentare_1973_01/page/n103/mode/2up |pages=100–104 |magazine=Sperimentare |date=January 1973 |access-date=2022-05-05}}</ref>
<ref name=telefunken>{{cite book |title=Die Flip-Flops der DTLZ-FP-Familie |language=de |author1=P. Sieber |author2=J. Kuhlmann |url=http://www.rainers-elektronikpage.de/Telefunken-Applikationsbericht/TFK-FF_DTLZ-Familie_0271.pdf |publisher=AEG-Telefunken |place=Heilbronn |access-date=2022-05-04 |archive-url=https://web.archive.org/web/20200107011021/http://www.rainers-elektronikpage.de/Telefunken-Applikationsbericht/TFK-FF_DTLZ-Familie_0271.pdf |archive-date=7 January 2020 |url-status=dead}}</ref>
<ref name=telefunken2>{{cite book |title=Semiconductor survey 1972/1973 |publisher=AEG-Telefunken |place=Heilbronn |url=https://archive.org/details/katalog-tfk-halbleiter/page/28 |access-date=2022-08-23}}</ref>
<ref name=radioelettronica7303>{{cite magazine |title=Integrati Logici CML |language=it |url=http://www.introni.it/pdf/Radio%20Elettronica%201973_03.pdf |page=6 |magazine=Radio Elettronica |date=March 1973 |publisher=Etas Kompass |place=Milano |access-date=2022-05-05}}</ref>
<ref name=babani74>{{cite book |title=Handbook of Integrated Circuits (IC's) Equivalents and Substitutes |author=Bernard B. Babani |publisher=Bernards |place=London |date=1974 |isbn=0 900162 35 X |url=https://worldradiohistory.com/UK/Bernards-And-Babani/Bernards/Bernards%20BP202%20IC%20Equivalents%20and%20Substitutes.pdf}}</ref>
<ref name=sadchenkov2009>{{cite book |title=Маркировка радиодеталей отечественных и зарубежных Справ. пособие т. 2 |trans-title=Marking of domestic and foreign electronic components, reference guide, volume 2 |last=Садченков |first=Дмитрий Андреевич |language=ru |publisher=Solon-P |place=Moscow |date=2009 |isbn=5934551299 |pages=8–10}}</ref>
<ref name=sgs4011>{{cite web |url=http://pdf.datasheetcatalog.com/datasheet_pdf/sgs-thomson-microelectronics/HCC4011BF_to_HCF4023BF.pdf |title=HCC4011B/12B/23B HCF4011B/12B/23B |publisher=SGS-Thomson Microelectronics |date=1984 |accessdate=2022-11-21}}</ref>
}}

== External links ==
* [https://www.eusemiconductors.eu/epcia/about-epcia/members/2-esia/public-website/97-pro-electron Pro Electron]
* [https://web.archive.org/web/20131229131903/http://material.htlwien10.at/wissensspeicher/Halbleiterkennzeichnungen/European_Type_Designation_Code-Sstem_for_Electronic_Components_PE-D15-2008_Pro-Electron.pdf European Type Designation Code System for Electronic Components (15 ed)], Pro-Electron, Brussels, Belgium, 6/2008; with tube designation systems

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