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  • .../okq/index.htm |language=sv }} (HTML 3 kB)</ref> When designing a magnetic memory store, the ferromagnetic layer must be studied to determine the variation o * [[Carousel memory]], 2560-[[kilobyte]] storage unit first sold in 1958 ...
    2 KB (308 words) - 12:40, 12 October 2023
  • == HCI and NOR flash memory cells == HCI is the basis of operation for a number of [[non-volatile memory]] technologies such as [[EPROM]] cells. As soon as the potential detrimenta ...
    13 KB (1,959 words) - 16:45, 11 August 2023
  • ...media possessions due to its ability to serve as "proof" that an event or memory actually occurred.<ref>Aarts, E. H. L., and Stefano Marzano. The new everyd "''Our memory and the stories we create, share, retell and live are a powerful way in whi ...
    4 KB (616 words) - 02:41, 15 October 2023
  • {{short description|Novel type of computer memory}} ...e structure of a DRAM cell|single transistor Ferrolectric FET memory|FeFET memory}} ...
    25 KB (3,726 words) - 08:31, 6 March 2024
  • ...ntrolled by time. The model posits an internal [[clock]], and particular [[memory]] and [[Decision making|decision]] processes.<ref name=gibbon>{{cite journa ...in a long-term reference memory. This time-to-reinforcement in reference memory represents the expected time to reinforcement. ...
    7 KB (1,027 words) - 23:39, 28 June 2023
  • * Systems ''with memory'' do depend on past input. ...idering the meaning of memory in a system. Future output of a system with memory depends on future input and a number of state variables, such as values of ...
    9 KB (1,306 words) - 09:24, 12 February 2024
  • ...nal|doi=10.1038/s41467-017-00096-4|title=Piezomagnetism and magnetoelastic memory in uranium dioxide|year=2017|last1=Jaime|first1=M.|last2=Saul|first2=A.|las ...
    3 KB (430 words) - 09:20, 6 March 2023
  • | Dual In-line Memory Module | Dynamic random-access memory ...
    24 KB (3,119 words) - 20:42, 31 October 2023
  • ===Nonvolatile memory=== ....K. | title =Ferroelectric polymer Langmuir-Blodgett films for nonvolatile memory applications| journal=IEEE Transactions on Device and Materials Reliability ...
    19 KB (2,554 words) - 19:10, 8 December 2023
  • ...ruction and how those aspects can either facilitate or hinder learning and memory. It emphasizes using strategies that focus the learner's attention, promote ...imitations of such devices, there was a need to design effective, portable memory aid devices that provide cues and relevant information. Listed below are so ...
    12 KB (1,655 words) - 18:33, 19 January 2024
  • ...K.|date=March 2019|title=Acute stress enhances general-knowledge semantic memory|journal=Hormones and Behavior|language=en|volume=109|pages=38–43|doi=10.101 ===Long-term semantic memory=== ...
    14 KB (1,765 words) - 00:15, 1 February 2024
  • ...ing. (Remembering details vs. getting an overall meaning) links individual memory traces together, to create conceptual chunks."<ref>[[Barbara Oakley]], ''A ...
    8 KB (1,226 words) - 12:39, 8 January 2024
  • {{Short description|Paradigm in the science of memory}} ...erent characteristics of memory as well as reflect different ways of using memory. ...
    42 KB (6,144 words) - 22:07, 5 November 2022
  • ....{{citation needed|date=June 2017}} Historically, testing of magnetic core memory arrays produced the "shmoo" shape and the term continued into the semicondu For example, when testing [[semiconductor]] [[memory]]: [[voltage]]s, [[temperature]], and [[refresh rate]]s can be varied over ...
    7 KB (1,131 words) - 21:36, 29 June 2023
  • ...ries, threshold switches, [[transistor]]s,<ref>{{Cite journal|title = Mott Memory and Neuromorphic Devices|journal = Proceedings of the IEEE|date = 2015-08-0 ...Labs]] on Mott memristors has shown that while they can be non-[[Volatile memory|volatile]], the volatile behavior exhibited at temperatures significantly b ...
    37 KB (4,952 words) - 22:57, 2 January 2024
  • ...ed Voices’: Non-Human Agencies of Socio-Cultural Memory"|page = 45 |title =Memory in Motion|editor1-first= Ina|editor1-last= Blom|editor2-first= Trond|editor * [[Collective memory]] ...
    20 KB (2,716 words) - 04:44, 9 February 2024
  • ...|last1=Bhatti |display-authors=etal |title=Spintronics based random access memory: a review |journal=Materials Today |year=2017 |volume=20 |issue=9 |pages=53 ...echnology Roadmap for Semiconductors|ITRS]] exploratory road map. Logic-in memory applications are already in the development stage.<ref>[https://archive.tod ...
    30 KB (3,811 words) - 21:36, 5 January 2024
  • ...ich retain their set position using a storage mechanism similar to [[flash memory]] or [[EEPROM]]. ...
    28 KB (4,107 words) - 03:08, 26 February 2024
  • ...rs.<ref>U. Wolf and H. Schamel,"Wake-field Generation by the Ponderomotive Memory Effect", ...
    11 KB (1,664 words) - 16:19, 1 March 2024
  • ...s to respond to a request for service. That service can be anything from a memory fetch, to a disk IO, to a complex database query, or loading a full web pag ...
    5 KB (809 words) - 11:24, 19 August 2023
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