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- ...uit]]s. <ref> Rao R. Tummala et al, ''Microelectronics Packaging Handbook: Semiconductor packaging'', Springer, 1997 {{ISBN|0-412-08441-4}}, page 8-75 </ref> ...elf-supporting beam leads or internal chiplets [[cantilever]]ed beyond the semiconductor material. These contacts not only served as electrical leads but also provi ...3 KB (391 words) - 19:09, 9 October 2023
- '''Glossary of [[microelectronics]] [[Semiconductor device fabrication|manufacturing]] terms''' ...rcuit|3D integration]]''' – an advanced [[Semiconductor device fabrication|semiconductor]] technology that incorporates multiple layers of [[Electronic circuit|circ ...14 KB (1,872 words) - 11:55, 18 October 2023
- ...of microscopic gears fabricated on a microchip would be considered a MEMS device but a tiny laser-machined stent or watch component would not). In Europe, t ...and process, and most likely a completely different [[fabrication (metal)|fabrication]] facility and engineering team. ...7 KB (912 words) - 20:26, 15 February 2024
- ...e memory arrays produced the "shmoo" shape and the term continued into the semiconductor era. ...oprocessors. The plot usually shows the range of conditions in which the [[device under test]] operates (in adherence with some remaining set of specificatio ...7 KB (1,131 words) - 21:36, 29 June 2023
- ...8-1101}}</ref><ref>{{Cite patent|number=WO2000077533A3|title=Semiconductor device simulation method and simulator|gdate=2001-04-26|invent1=Lui|inventor1-firs ...es involves an iterative process that crosses boundaries of technology and device development, product design and quality assurance. Modeling and simulation ...14 KB (2,069 words) - 08:37, 21 February 2024
- ...ion ( IR ) striking the sensor produces a change in the temperature of the device that as a consequence generates an electric output signal proportional to t == Fabrication process == ...17 KB (2,486 words) - 22:08, 10 January 2024
- ...or aging|one of the mechanisms]] that adversely affects the [[Reliability (semiconductor)|reliability of semiconductors]] of solid-state devices.<ref name=KK2011>{{ ...term “hot carrier injection” usually refers to the effect in [[Metal–Oxide–Semiconductor Field-Effect Transistor|MOSFET]]s, where a carrier is injected from the con ...13 KB (1,959 words) - 16:45, 11 August 2023
- ...ally applied, it charges the capacitor, which acts as a short term storage device to keep the output at an acceptable level while the PDC waveform is at a lo ...Carbon Sputter Issues}}</ref> and for increasing yield in [[semiconductor fabrication]] by reducing [[electrostatic]] build-up.<ref>{{Cite web | url=http://www.f ...5 KB (785 words) - 20:18, 14 January 2024
- ...istic|current–voltage (I–V) relationship]] of [[Diode#Semiconductor diodes|semiconductor diodes]] in moderate [[constant current]] [[forward bias]] or [[reverse bia ...nding on the [[fabrication process]] and [[List of semiconductor materials|semiconductor material]]. The ideality factor was added to account for imperfect [[P–n ju ...12 KB (1,851 words) - 22:29, 3 January 2024
- ...rchive-date=2016-08-22}}</ref> Following the introduction of [[metal–oxide–semiconductor]] (MOS) dynamic [[random-access memory]] ([[DRAM]]) chips in the early 1970 ...s]] introduced a 4{{nbsp}}[[Mebibit|Mb]] FeRAM chip [[semiconductor device fabrication|fabricated]] using [[NMOS logic]].<ref name="Scott">{{cite book |last1=Scot ...25 KB (3,726 words) - 08:31, 6 March 2024
- ...onal use of [[active component|active]] components such as [[semiconductor device]]s to amplify and control electric current flow. Previously electrical engi ...]s from a [[antenna (radio)|radio antenna]] possible with a non-mechanical device. The growth of electronics was rapid. By the early 1920s, commercial radio ...23 KB (3,042 words) - 10:09, 2 March 2024
- ...ield was pioneered by a number of investigators throughout the fledgling [[semiconductor]] industry. One of the most important engineering studies was performed by ...electromigration (EM) continues to be an ever-present challenge to device fabrication, and therefore the EM research for copper interconnects is ongoing (though ...36 KB (5,027 words) - 04:50, 8 March 2024
- ...ical sensors picking up in the 1960s with the demonstration of metal-oxide semiconductor sensors capable of sensing analyses such as oxygen.<ref>{{Cite journal|last ...mework|covalent-organic]] frameworks.<ref name=":0" /> One of the simplest device architectures for an electronic chemical sensor is a [[chemiresistor]], and ...45 KB (6,243 words) - 17:26, 28 December 2023
- ...every electronic device is a [[printed circuit board|PCB]] onto which the semiconductor and other components are mechanically and electrically connected by solderi ...test points, component [[bill of materials]], [[component placement]] and fabrication data. ...30 KB (3,867 words) - 15:11, 30 January 2024
- ...avalanche [[photo diode]], LASERs. Device technology: integrated circuits fabrication process, oxidation, diffusion, ion implantation, photolithography, n-tub, p ...]]s. Sample and hold circuits, [[Analog-to-digital converter|ADC]]s, DACs. Semiconductor memories. [[Microprocessor]] (8085): architecture, programming, memory and ...10 KB (1,343 words) - 11:26, 2 March 2023
- [[Charge-coupled device]] – [[Covert listening device]] – ...34 KB (2,862 words) - 14:54, 18 February 2024
- ...earliest attempts to reduce the amount of power required by an electronic device were related to the development of the [[wristwatch]]. Electronic watches r ...uminating Arrangement for a Field-Effect Liquid-Crystal Display as well as Fabrication and Application of the Illuminating Arrangement'', filed 15 October 1976.</ ...17 KB (2,558 words) - 17:32, 6 February 2024
- ...p;mm), although components arranged in arrays (e.g., [[digital micromirror device]]s) can be more than 1000 mm<sup>2</sup>.<ref>{{Cite book|url=https:// ...ctical once they could be fabricated using modified [[semiconductor device fabrication]] technologies, normally used to make [[electronics]].<ref>{{Cite journal|v ...44 KB (6,295 words) - 20:04, 4 March 2024
- ...sical, biological, and [[chemical sensors]]. The name derives from typical device dimensions in the [[nanometer]] range, leading to low mass, high mechanical ...1–62 |url=https://ieeexplore.ieee.org/document/4480422}}</ref> [[Multigate device|Multi-gate MOSFETs]] enabled [[MOSFET scaling|scaling]] below [[22 nm proce ...47 KB (6,387 words) - 01:49, 30 December 2023
- ...ackwood to describe an effect proposed for designing a new type of display device for which they received a patent.<ref>{{cite journal |last1=Beni |first1=G. ...rowetting’.<ref>S. Arscott and M. Gaudet "Electrowetting at a liquid metal–semiconductor junction" Appl. Phys. Lett. 103, 074104 (2013). {{doi|10.1063/1.4818715}}.< ...22 KB (2,985 words) - 12:35, 2 March 2024