File:Threshold formation nowatermark.gif
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Summary
| Description |
English: Formation of channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45V.
OMENwire on www.nanoHUB.org Link: http://nanohub.org/resources/omenwire |
| Date | |
| Source | Own work |
| Author | Saumitra R Mehrotra & Gerhard Klimeck, modified by Zephyris |
Licensing
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I, the copyright holder of this work, release this work into the public domain. This applies worldwide. In some countries this may not be legally possible; if so: I grant anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law. |
File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 16:57, 26 August 2010 | | 722 × 328 (267 KB) | wikimediacommons>Zephyris | {{Information |Description={{en|1=Formation of channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45V. OMENwire on www.nanoHUB.org Link: http://nanohub.o |
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