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- |K||N-channel FETs (both JFETs and MOSFETs) ...3 KB (361 words) - 04:12, 16 February 2023
- As a result, internal electric fields increase in aggressively scaled MOSFETs, which comes with the additional benefit of increased carrier velocities (u ...he buried oxide in the case of [[silicon on insulator]] (SOI) [[SOI MOSFET|MOSFETs]]. ...13 KB (1,959 words) - 16:45, 11 August 2023
- ...ows a Dickson voltage doubler using diode-wired n-channel enhancement type MOSFETs.<ref>{{harvnb|Liu|2006|p=226}}<br />Yuan, p.14</ref> ...r.svg|thumb|left|'''Figure 8.''' Dickson voltage doubler using diode-wired MOSFETs]] ...22 KB (3,282 words) - 13:23, 7 March 2024
- ...ng losses|de|Schaltverluste}} on the [[Power semiconductor device#Switches|MOSFETs]] used. ...9 KB (1,235 words) - 22:39, 9 May 2022
- [[Category:MOSFETs]] ...8 KB (1,042 words) - 19:32, 27 February 2024
- 10 KB (1,343 words) - 11:26, 2 March 2023
- ...or candidates due to long switching times arising from bipolar conduction. MOSFETs, on the other hand, have much faster switching capability because of their ...26 KB (3,845 words) - 22:23, 6 February 2024
- ...plore.ieee.org/search/wrapper.jsp?arnumber=1050511 Design of ion-implanted MOSFETs with very small physical dimensions], IEEE Jour. Solid-State Circuits, vol. ...14 KB (2,069 words) - 08:37, 21 February 2024
- ...voltage DC supply. Finally, this DC supply is pulsed with additional power MOSFETs by the microcontroller to produce the final modified sine wave signal. ...49 KB (7,327 words) - 13:42, 13 February 2024
- ...relatively basic materials, allows astonishingly low per-transistor costs. MOSFETs are the most numerously produced artificial objects in history, with more t ...advanced [[microprocessor]], as of 2022, may contain as many as 57 billion MOSFETs.<ref>{{cite web |title=Introducing M1 Pro and M1 Max: the most powerful chi ...94 KB (12,903 words) - 23:13, 7 March 2024
- 35 KB (5,008 words) - 06:11, 10 February 2024
- ...ion]], which causes changes in voltage across the device.<ref name=":0" /> MOSFETs are highly tunable but remain limited by their cross-reactivity, and high o ...45 KB (6,243 words) - 17:26, 28 December 2023
- |MOSFET (Pro Electron includes MOSFETs in letters C, D, F, L, S, U) ...24 KB (3,425 words) - 06:08, 25 December 2022
- ...': Equivalent circuits (large and small-signal) of diodes, BJT, JFETs, and MOSFETs. Simple diode circuits, clipping, clamping, rectifier. Biasing and bias sta ...23 KB (3,042 words) - 10:09, 2 March 2024
- ...|last1=Grant |first1=Duncan Andrew |last2=Gowar |first2=John |title=Power MOSFETS: theory and applications |date=1989 |publisher=[[Wiley (publisher)|Wiley]] ...ril 2017|website=The New York Times}}</ref> The mass-production of silicon MOSFETs and MOS integrated circuit chips, along with continuous [[MOSFET scaling]] ...80 KB (11,122 words) - 09:59, 4 March 2024
- 32 KB (4,860 words) - 10:06, 28 February 2024
- ...|title=Power MOSFET Basics |url=http://www.aosmd.com/res/application_notes/mosfets/Power_MOSFET_Basics.pdf |website=Alpha & Omega Semiconductor |access-date=2 ...27 KB (3,720 words) - 03:32, 2 March 2024
- ...significant voltage drop even at very low current levels. Paralleling two MOSFETs (pink curve) reduces the losses further, whereas paralleling several diodes ...64 KB (9,670 words) - 09:27, 12 February 2024
- ...pen collector]] [[NPN transistor|NPN transistors]] (or open drain n-type [[MOSFETs]]) for compatibility with ICs that use different supply voltages.<ref name= ...34 KB (4,899 words) - 10:50, 6 March 2024
- 36 KB (5,027 words) - 04:50, 8 March 2024
