Search results

...neering]] and [[materials science]], '''electromaterials''' are the set of materials which store, controllably convert, exchange and conduct electrically [[char ...ng Polymers, 2 Volume Set. (2007). [https://doi.org/10.1201/b12346].</ref> Materials which can be ionised (i.e. electrons either added or stripped away) may als ...

...ringer, New York 2005, {{ISBN|3-540-25470-6}}</ref> When this happens, the semiconductor is said to be in a state of '''velocity saturation'''. <ref name="e2">{{cit ...10-100&nbsp;kV/cm. Both saturation field and the saturation velocity of a semiconductor material are typically strong function of impurities, [[crystal defect]]s a ...

...ive force appears, whose magnitude depends on the voltage and the specific materials involved. The attractive force is much larger than would be produced by Cou ...| title = Materials with electroprogrammable stiffness | journal= Advanced Materials | volume = 33 | issue = 35 | page = 2007952 | year = 2021 | url = https://w ...

...ative positions of the atoms or molecules are completely random. Amorphous materials, such as [[liquids]] and [[glass]]es, represent an intermediate case, havin ...ighly perfect crystals are silicon [[Boule (crystal)|boules]] produced for semiconductor electronics; these are large [[single crystal]]s (so they have no grain bou ...

...Solar Transistor and Photoferroelectric Memory|journal=Advanced Functional Materials|volume=28|issue=17|pages=1707099|language=en|doi=10.1002/adfm.201707099|iss ...(a material that absorbs [[photon energy]]) in series with a functional [[semiconductor]] transport layer, which internal conductivity or contact resistance can be ...

...ying optoelectronic properties of semiconductors and other light absorbing materials.<ref name="RSC-def"> </ref> The setup of the technique involves having a semiconductor contacted with electrodes allowing for application of an electric bias, whi ...

...ed for various applications, including electric and magnetic properties of materials as well as reactivity. The temperature coefficient of most of the reactions ...increasing temperature, typically in a defined temperature range. For most materials, electrical resistivity will decrease with increasing temperature. ...

...an [[accelerometer]] that employs the [[piezoelectric effect]] of certain materials to measure dynamic changes in mechanical variables (e.g., acceleration, vib ...ial. This differs from a [[piezoresistive]] effect in that piezoresistive materials experience a change in the resistance of the material rather than a change ...

Molybdenum disilicide and MoSi₂-based materials are usually made by [[sintering]]. [[Plasma spraying]] can be used for prod ...]], [[steel]], [[electronics]], [[ceramic]]s, and in [[heat treatment]] of materials. While the elements are brittle, they can operate at high power without agi ...

'''Glossary of [[microelectronics]] [[Semiconductor device fabrication|manufacturing]] terms''' ...rcuit|3D integration]]''' – an advanced [[Semiconductor device fabrication|semiconductor]] technology that incorporates multiple layers of [[Electronic circuit|circ ...

{{short description|Subdiscipline of condensed matter physics that deals with materials of an intermediate size}} ...ts contain many atoms. Whereas average properties derived from constituent materials describe macroscopic objects, as they usually obey the laws of [[classical ...

** [[Materials engineering]] ...engineering]] (includes microelectronics engineering, microelectronics and semiconductor engineering) ...

...rovided the basis for a variety of novel and specialized applications in [[semiconductor]] manufacturing, [[microelectromechanical systems]], [[nanoelectromechanica ...metal around the cold copper crucible walls. This ensures that the purest materials can be produced and refined in electron-beam vacuum furnaces. Rare and [[re ...

...erstood by nature of chemical bonding of atoms at the surface. In metallic materials, atomic chemical bonding structure at the surface is very different from in ====Semiconductor surfaces==== ...

...er|isbn=9780750669061|location=Oxford, UK|pages=607}}</ref> These produced materials and structures that have 1-100&nbsp;nm in dimensions.<ref name=":0" /> ** [[Channel (semiconductor)|channels]] ...

...or aging|one of the mechanisms]] that adversely affects the [[Reliability (semiconductor)|reliability of semiconductors]] of solid-state devices.<ref name=KK2011>{{ ...term “hot carrier injection” usually refers to the effect in [[Metal–Oxide–Semiconductor Field-Effect Transistor|MOSFET]]s, where a carrier is injected from the con ...

...istic|current–voltage (I–V) relationship]] of [[Diode#Semiconductor diodes|semiconductor diodes]] in moderate [[constant current]] [[forward bias]] or [[reverse bia ...nding on the [[fabrication process]] and [[List of semiconductor materials|semiconductor material]]. The ideality factor was added to account for imperfect [[P–n ju ...

...en used to fit the complex [[refractive index]] of amorphous semiconductor materials at frequencies greater than their optical [[band gap]]. The [[dispersion re | title = Parameterization of the optical functions of amorphous materials in the interband region ...

In electronic and semiconductor devices, transient or frequency-dependent current between terminals contain ...|first=S.E. |date=Oct 1985 |title=Techniques for small-signal analysis of semiconductor devices |journal=IEEE Transactions on Computer-Aided Design of Integrated C ...

...refractive index of amorphous and crystalline semiconductor and dielectric materials at energies near and greater than their optical [[band gap]].<ref name = "C ...uhi and Bloomer derived a formula for <math>\kappa(E)</math> for amorphous materials. The formula and complementary Kramers–Kronig integral are given by<ref nam ...